陶冶
东北师范大学物理学院
个人简历
陶冶,男,博士,副教授。天津大学,电子科学与技术(微电子学与固体电子学),学士;天津大学,微电子学与固体电子学,硕士;东北师范大学,凝聚态物理,博士。主要从事忆阻器件制备、忆阻性能优化和嵌入式忆阻软硬件开发等工作。相关结果作为第一作者或通讯作者发表在Nano energy,Small,IEEE EDL,IEEE J. Electron. Devi.,Appl. Phys. Lett.,Adv. Electron. Mater.等国际知名SCI期刊,申请/授权专利6项。主持国家自然科学基金委青年基金,国家重点研发计划项目子任务,总装预研项目,吉林省科技厅面上项目等多个课题。 如对忆阻器软硬件研究领域感兴趣,欢迎联系taoy506@nenu.edu.cn!招生专业:应用物理、电子信息、控制科学与工程。
微机原理与接口技术;电子测量原理;现代电子技术应用及发展
项目: 1. 可重构铁电存算器件规模化集成技术及多功能阵列,2024年 2. 双忆阻器耦合型脉冲人工神经元研制,2023年 3. 基于MeOx/碳基材料界面氧互迁移构筑自供电忆阻器件及其类脑信息存储研究,2022年 论文: 1. Humidity-mediated synaptic plasticity in Ag loaded porous SiOx based memristor for multimodal neuromorphic sensory system,MATERIALS TODAY NANO,2024年 2. Polygon Boolean operations and physical unclonable functions implemented by an Ag-embedded sodium-alginate-based memristor for image encryption/decryption,APPLIED PHYSICS LETTERS,2024年 3. Advances in memristor based artificial neuron fabrication-materials, models, and applications,INTERNATIONAL JOURNAL OF EXTREME MANUFACTURING,2024年 4. Biodegradable and flexible i-carrageenan based RRAM with ultralow power consumption,CHINESE PHYSICS B,2024年 5. A true random number generator based on double threshold-switching memristors for image encryption,APPLIED PHYSICS LETTERS,2023年 6. Doppler Frequency-Shift Information Processing in WOx-Based Memristive Synapse for Auditory Motion Perception,ADVANCED SCIENCE,2023年 7. Temperature-modulated switching behaviors of diffusive memristor for biorealistic emulation of synaptic plasticity,APPLIED PHYSICS LETTERS,2023年 8. Multi-Wavelength-Recognizable Memristive Devices via Surface Plasmon Resonance Effect for Color Visual System,SMALL,2023年 9. Lightweight MXene/carbon composite foam with hollow skeleton for air-stable, high-temperature-resistant and compressible electromagnetic interference shielding,CARBON,2023年 10. Optoelectronic synaptic device based on ZnO/HfOx heterojunction for high-performance neuromorphic vision system,APPLIED PHYSICS LETTERS,2022年 11. Thermal stable and low current complementary resistive switch with limited Cu source in amorphous carbon,APPLIED PHYSICS LETTERS,2022年 12. Real-time numerical system convertor via two-dimensional WS2-based memristive device,FRONTIERS IN COMPUTATIONAL NEUROSCIENCE,2022年 13. 基于果胶的阻变存储器件性能的优化,物理实验,2022年 14. A Stacked Memristive Device Enabling Both Analog and Threshold Switching Behaviors for Artificial Leaky Integrate and Fire Neuron,IEEE ELECTRON DEVICE LETTERS,2022年 15. Conductance Quantization in CH3NH3PbI3 Memristor,IEEE ELECTRON DEVICE LETTERS,2022年 16. Photocatalysis-Induced Nanopores toward Highly Reliable Organic Electrochemical Metallization Memory,ADVANCED ELECTRONIC MATERIALS,2022年 17. 碳黑掺杂氧化石墨烯基阻变存储器的制备及其特性研究,物理实验,2022年 18. Self-Powered Memristive Systems for Storage and Neuromorphic Computing,FRONTIERS IN NEUROSCIENCE,2021年 19. Neutron irradiation-induced effects on the reliability performance of electrochemical metallization memory devices,JOURNAL OF SEMICONDUCTORS,2021年 20. Reliable restriction of conductive filament in graphene oxide based RRAM devices enabled by a locally graphitized amorphous carbon layer,JPN J APPL PHYS,2020年 21. Moisture-powered memristor with interfacial oxygen migration for power-free reading of multiple memory states,NANO ENERGY,2020年 22. Analytical modeling of electrochemical metallization memory device with dual-layer structure of Ag/AgInSbTe/amorphous C/Pt,SEMICOND SCI TECH,2020年 23. Nano-Graphite Clusters Regulation for Reliability Improvement of Amorphous Carbon-Based Resistive Random Access Memory,PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE,2019年 24. Graphite Microislands Prepared for Reliability Improvement of Amorphous Carbon Based Resistive Switching Memory,PHYS STATUS SOLIDI-R,2018年 25. Highly uniform switching of HfO2-x based RRAM achieved through Ar plasma treatment for low power and multilevel storage,APPL SURF SCI,2018年 26. Improved Uniformity and Endurance Through Suppression of Filament Overgrowth in Electrochemical Metallization Memory With AgInSbTe Buffer Layer,IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY,2018年 27. Interface State-Induced Negative Differential Resistance Observed in Hybrid Perovskite Resistive Switching Memory,ACS APPLIED MATERIALS & INTERFACES,2018年 28. Improved switching reliability achieved in HfOx based RRAM with mountain-like surface-graphited carbon layer,APPL SURF SCI,2018年 29. Improved resistive switching reliability by using dual-layer nanoporous carbon structure,APPL PHYS LETT,2017年