职  称:教授
研究方向:半导体材料与器件
办公电话:/
办公地点:/
电子邮件:hyxu@nenu.edu.cn

个人简历

徐海阳,凝聚态物理专业博士,教授,博士生导师。

社会兼职

获奖情况 (数据来源:科学技术处、社会科学处)

  • 2019-12-18 国家自然科学奖二等奖

教学信息

  • -

科研信息 (数据来源:科学技术处、社会科学处)

  • 项目:
  • 1. 忆阻材料与器件,2021年
  • 2. 高性能忆阻器件及其物理机制研究,2021年
  • 3. 忆阻材料与器件,2020年
  • 4. 基于等离激元诱导电荷分离(PICS)效应的高密度光电耦合信息存储材料研究,2019年
  • 5. 多孔非晶碳薄膜的忆阻效应及其超低功耗突触器件研究,2018年
  • 6. 无机非金属材料战略研讨会,2018年
  • 7. 非晶碳忆阻器件局域结构调控、机制探究及其信息存储、神经突触仿生应用,2016年
  • 8. 宽禁带半导体材料与光电器件,2014年
  • 9. 基于zno纳米线/金属局域表面等离激元(lsp)复合体系的紫外发光二级管的制备及其效率改善研究,教育部,2013年
  • 10. 基于pn结空间电荷区宽度调制的忆阻器:材料、忆阻行为调控与神经突触仿生研究,国家自然科学基金委员会,2013年
  • 11. 2012中美自然科学基金纳米材料国际研讨会,国家自然科学基金委员会,2012年
  • 12. 吉林省ZnO基材料的光发射、光探测及生物检测应用研究创新团队,吉林省科技厅,2012年
  • 13. 教育部新世纪优秀人才支持计划项目NCET-11-0615,教育部,2012年
  • 14. MgZnO/MgO量子阱的生长、物性调控及其深紫外光发射器件研究,国家自然科学基金委员会,2011年
  • 15. 高迁移率非晶透明InGaZnO薄膜晶体管研究,吉林省科技厅,2010年
  • 16. 基于p-GaN/i-MgO/n-MgxZn1-xO异质结构波长可调的紫外光发射器件研究,国家自然科学基金委员会,2009年
  • 17. (Mn,N)共掺杂ZnO稀磁半导体材料的物性研究,校内自然科学青年基金,2009年
  • 18. p型ZnO纳米线阵列的生长及p-n结发光器件研究,吉林省科技厅,2009年
  • 专著:
  • 1. Phosphor Handbook: Fundamentals of Luminescence,CRC Press,31-1年
  • 2. 东北师范大学“创造的教育”示范课堂案例集:2018-2021,东北师范大学出版社,2022年
  • 3. 教师教育何以创新(2018-2022),东北师范大学出版社,2022年
  • 4. Photo-Electroactive Nonvolatile Memories for Data Storage and Neuromorphic Computing,Elsevier,01-5年
  • 5. Semiconducting Metal Oxide Thin-Film Transistors,IOP Publishing,01-1年
  • 论文:
  • 1. Broadband metamaterial absorber based on hybrid multi-mode resonance in mid-wave and long-wave infrared region,RESULTS IN PHYSICS,2022年
  • 2. Thermal stable and low current complementary resistive switch with limited Cu source in amorphous carbon,APPLIED PHYSICS LETTERS,2022年
  • 3. Real-time numerical system convertor via two-dimensional WS2-based memristive device,FRONTIERS IN COMPUTATIONAL NEUROSCIENCE,2022年
  • 4. Flexible TiN/Co@Carbon nanofiber mats for high-performance electromagnetic interference shielding and Joule heating applications,CARBON,2022年
  • 5. Memristors with Biomaterials for Biorealistic Neuromorphic Applications,Small science,2022年
  • 6. Polarization-vortex holographic encryption based on photo-oxidation of a plasmonic disk,OPTICS LETTERS,2022年
  • 7. A Stacked Memristive Device Enabling Both Analog and Threshold Switching Behaviors for Artificial Leaky Integrate and Fire Neuron,IEEE ELECTRON DEVICE LETTERS,2022年
  • 8. Defect-suppressed submillimeter-scale WS2 single crystals with high photoluminescence quantum yields by alternate-growth-etching CVD,MATERIALS HORIZONS,2022年
  • 9. Conductance Quantization in CH3NH3PbI3 Memristor,IEEE ELECTRON DEVICE LETTERS,2022年
  • 10. Polarization-selective absorptive and transmissive metamaterials,OPTICS EXPRESS,2022年
  • 11. Photocatalysis-Induced Nanopores toward Highly Reliable Organic Electrochemical Metallization Memory,ADVANCED ELECTRONIC MATERIALS,2022年
  • 12. Engineering Relaxation-Paths of C-Exciton for Constructing Band Nesting Bypass in WS2 Monolayer,NANO LETTERS,2022年
  • 13. Deep-Blue Emissive Cs3Cu2I5 Perovskites Nanocrystals with 96.6% Quantum Yield via InI3-Assisted Synthesis for Light-Emitting Device and Fluorescent Ink Applications,NANO ENERGY,2022年
  • 14. Ultrafast growth of submillimeter-scale single-crystal MoSe2 by pre-alloying CVD,NANOSCALE HORIZONS,2022年
  • 15. 面向感存算一体化的光电忆阻器件研究进展,ACTA PHYSICA SINICA,2022年
  • 16. Pavlovian conditioning achieved via one-transistor/one-resistor memristive synapse,APPLIED PHYSICS LETTERS,2022年
  • 17. Plasmonic Optoelectronic Memristor Enabling Fully Light-Modulated Synaptic Plasticity for Neuromorphic Vision,ADVANCED SCIENCE,2022年
  • 18. A review on sustainable synthetic approaches toward photoluminescent quantum dots,GREEN CHEMISTRY,2022年
  • 19. Multi-mode plasmonic resonance broadband LWIR metamaterial absorber based on lossy metal ring,OPTICS EXPRESS,2022年
  • 20. Natural Acidic Polysaccharide-Based Memristors for Transient Electronics: Highly Controllable Quantized Conductance for Integrated Memory and Nonvolatile Logic Applications,ADVANCED MATERIALS,2021年
  • 21. Highly Photoluminescent Monolayer MoS2 and WS2 Achieved via Superacid Assisted Vacancy Reparation and Doping Strategy,LASER & PHOTONICS REVIEWS,2021年
  • 22. Suspended few-layer GaS photodetector with sensitive fast response,MATER DESIGN,2021年
  • 23. Dual-Band Metamaterial Absorber with a Low-coherence Composite Cross Structure in Mid-Wave and Long-Wave Infrared Bands,OPTICS EXPRESS,2021年
  • 24. Polarization-dependent broadband absorber based on composite metamaterials in the long-wavelength infrared range,OPTICS EXPRESS,2021年
  • 25. Controlling Photocarrier Lifetime in Graphene for Enhanced Photocurrent Generation via Cascade Hot Electron Transfer,JOURNAL OF PHYSICAL CHEMISTRY LETTERS,2021年
  • 26. Thermal-assisted electroforming enables performance improvement by suppressing the overshoot current in amorphous carbon-based electrochemical metallization memory,APPLIED PHYSICS LETTERS,2021年
  • 27. Piezoelectric Effect Enhanced Flexible UV Photodetector Based on Ga2O3/ZnO Heterojunction,MATERIALS TODAY PHYSICS,2021年
  • 28. Unraveling the synergetic mechanism of physisorption and chemisorption in laser-irradiated monolayer WS2,Nano Research ,2021年
  • 29. Revealing the interrelation between C- and A-exciton dynamics in monolayer WS2 via transient absorption spectroscopy,APPL PHYS LETT,2021年
  • 30. Rapid microwave annealing of CH3NH3PbI3 with controllable crystallization for enhancing the resistive-switching performance,SEMICOND SCI TECH,2021年
  • 31. Ultra-broadband metamaterial absorbers from long to very long infrared regime,LIGHT-SCIENCE & APPLICATIONS,2021年
  • 32. High switching uniformity and 50 fJ/bit energy consumption achieved in amorphous silicon-based memristive device with an AgInSbTe buffer layer,APPL PHYS LETT,2021年
  • 33. Humidity Effect on Resistive Switching Characteristics of the CH3NH3PbI3 Memristor,ACS APPLIED MATERIALS & INTERFACES,2021年
  • 34. Zeolite-Based Memristive Synapse with Ultralow Sub-10-fJ Energy Consumption for Neuromorphic Computation,SMALL,2021年
  • 35. Self-Powered Memristive Systems for Storage and Neuromorphic Computing,FRONTIERS IN NEUROSCIENCE,2021年
  • 36. Enhanced Photostability and Photoluminescence of PbI2 via Constructing Type-I Heterostructure with ZnO,Advanced photonics research,2021年
  • 37. Nitrogen-induced ultralow power switching in flexible ZnO-based memristor for artificial synaptic learning,APPL PHYS LETT,2021年
  • 38. Dual Buffer Layers for Developing Electrochemical Metallization Memory With Low Current and High Endurance,IEEE ELECTR DEVICE L,2021年
  • 39. Flexible and transparent memristive synapse based on polyvinylpyrrolidone/N-doped carbon quantum dot nanocomposites for neuromorphic computing,NANOSCALE ADVANCES,2021年
  • 40. An ultra-fast,self-powered and flexible visible-light photodetector based on graphene/Cu2O/Cu gradient heterostructures,JOURNAL OF MATERIALS CHEMISTRY C,2021年
  • 41. Self-Assembly of Highly-Dispersed Phosphotungstic Acid Clusters onto Graphitic Carbon Nitride Nanosheets as Fascinating Molecular-Scale Z-scheme Heterojunctions for Photocatalytic Solar-to-Fuels Conversion,APPL CATAL B-ENVIRON,2021年
  • 42. Highly stable and luminescent silica-coated perovskite quantum dots at nanoscale-particle level via nonpolar solvent synthesis,CHEM ENG J,2021年
  • 43. Neutron irradiation-induced effects on the reliability performance of electrochemical metallization memory devices,JOURNAL OF SEMICONDUCTORS,2021年
  • 44. Voltage-dependent plasticity and image Boolean operations realized in a WO x -based memristive synapse,JOURNAL OF SEMICONDUCTORS,2021年
  • 45. Photoreduced nanocomposites of graphene oxide/N-doped carbon dots toward all-carbon memristive synapses,NPG ASIA MATERIALS,2020年
  • 46. Photo-tunable organic resistive random access memory based on PVP/N-doped carbon dot nanocomposites for encrypted image storage,JOURNAL OF MATERIALS CHEMISTRY C,2020年
  • 47. Silent Synapse Activation by Plasma-Induced Oxygen Vacancies in TiO2 Nanowire-Based Memristor,ADVANCED ELECTRONIC MATERIALS,2020年
  • 48. High-performance high-temperature solar-blind photodetector based on polycrystalline Ga2O3 film,J ALLOY COMPD,2020年
  • 49. Manipulating Transfer and Separation of Photocarriers in Monolayer WS2 via CdSe Quantum Dot Doping,ACS PHOTONICS,2020年
  • 50. Reduced Graphene Oxide Conformally Wrapped Silver Nanowire Networks for Flexible Transparent Heating and Electromagnetic Interference Shielding,ACS NANO,2020年
  • 51. Theoretical study on group III elements and F co-doped ZnO,J ALLOY COMPD,2020年
  • 52. Toward a generalized Bienenstock-Cooper-Munro rule for spatiotemporal learning via triplet-STDP in memristive devices,Nature Communications,2020年
  • 53. Enhanced Carrier-Exciton Interactions in Monolayer MoS2 under Applied Voltages,ACS APPLIED MATERIALS & INTERFACES,2020年
  • 54. Photoassisted Electroforming Method for Reliable Low-Power Organic-Inorganic Perovskite Memristors,ADV FUNCT MATER,2020年
  • 55. Exploring the Limits of Transition-Metal Fluorination at High Pressures,ANGEW CHEM INT EDIT,2020年
  • 56. Moisture-powered memristor with interfacial oxygen migration for power-free reading of multiple memory states,NANO ENERGY,2020年
  • 57. Thermal polymerization synthesis of CsPbBr3 perovskite-quantum-dots@copolymer composite: Towards long-term stability and optical phosphor application,CHEM ENG J,2020年
  • 58. Unveiling Bandgap Evolution and Carrier Redistribution in Multilayer WSe2: Enhanced Photon Emission via Heat Engineering,ADVANCED OPTICAL MATERIALS,2020年
  • 59. Facile Fabrication of Ultraflexible Transparent Electrodes Using Embedded Copper Networks for Wearable Pressure Sensors,ADVANCED MATERIALS TECHNOLOGIES,2020年
  • 60. Analytical modeling of electrochemical metallization memory device with dual-layer structure of Ag/AgInSbTe/amorphous C/Pt,SEMICOND SCI TECH,2020年
  • 61. FeP3 monolayer as a high-efficiency catalyst for hydrogen evolution reaction,JOURNAL OF MATERIALS CHEMISTRY A,2019年
  • 62. High gain broadband photoconductor based on amorphous Ga2O3 and suppression of persistent photoconductivity,JOURNAL OF MATERIALS CHEMISTRY C,2019年
  • 63. Improved near-UV electroluminescence of ZnO nanorod array LEDs by coupling with a graphene plasmon layer,NANOPHOTONICS,2019年
  • 64. Resistive switching performance improvement of amorphous carbon-based electrochemical metallization memory via current stressing,APPL PHYS LETT,2019年
  • 65. The role of DUV laser irradiation in the optical and electrical properties of indium zinc oxide films synthesized by self-combustion,J ALLOY COMPD,2019年
  • 66. Memristors with organic-inorganic halide perovskites,InfoMat,2019年
  • 67. High-Temperature Ferromagnetism in an Fe3P Monolayer with a Large Magnetic Anisotropy,JOURNAL OF PHYSICAL CHEMISTRY LETTERS,2019年
  • 68. CsPbBr3-Quantum-Dots/Polystyrene@Silica Hybrid Microsphere Structures with Significantly Improved Stability for White LEDs,ADVANCED OPTICAL MATERIALS,2019年
  • 69. Achieving high transparent b-Ga2O3 through AlGa-InGa-VO,J ALLOY COMPD,2019年
  • 70. Analog-Digital Hybrid Memristive Devices for Image Pattern Recognition with Tunable Learning Accuracy and Speed,Small Methods,2019年
  • 71. Ultrafast carrier dynamics in two-dimensional transition metal dichalcogenides,JOURNAL OF MATERIALS CHEMISTRY C,2019年
  • 72. Engineering fluorescence intensity and electron concentration of monolayer MoS2 by forming heterostructures with semiconductor dots,NANOSCALE,2019年
  • 73. Zero-biased deep ultraviolet photodetectors based on graphene/cleaved(100) Ga2O3 heterojunction,OPT EXPRESS,2019年
  • 74. Predicted Pressure-Induced Superconducting Transition in Electride Li6P,PHYS REV LETT,2019年
  • 75. Interface Engineering of Solution-Grown Silver Nanofiber Networks Designed as Flexible Transparent Electrodes,JOURNAL OF MATERIALS CHEMISTRY C,2019年
  • 76. Slow Cooling of High-Energy C Excitons Is Limited by Intervalley-Transfer in Monolayer MoS2,LASER & PHOTONICS REVIEWS,2019年
  • 77. Two-Dimensional PC6 with Direct Band Gap and Anisotropic Carrier Mobility,J AM CHEM SOC,2019年
  • 78. Biodegradable Natural Pectin-Based Flexible Multilevel Resistive Switching Memory for Transient Electronics,SMALL,2019年
  • 79. Insertion of Nanoscale AgInSbTe Layer between the Ag Electrode and the CH3NH3PbI3 Electrolyte Layer Enabling Enhanced Multilevel Memory,ACS Applied Nano Materials,2019年
  • 80. Metallic P3C monolayer as anode for sodium-ion batteries,JOURNAL OF MATERIALS CHEMISTRY A,2019年
  • 81. Cycling-Induced Degradation of Organic-Inorganic Perovskite-Based Resistive Switching Memory,ADVANCED MATERIALS TECHNOLOGIES,2019年
  • 82. 2D few-layer iron phosphosulfide: a self-buffer heterophase structure induced by irreversible breakage of P-S bonds for high-performance lithium/sodium storage,JOURNAL OF MATERIALS CHEMISTRY A,2019年
  • 83. Intensity-modulated LED achieved through integrating p-GaN/n-ZnO heterojunction with multilevel RRAM,APPL PHYS LETT,2018年
  • 84. Transferable and Flexible Artificial Memristive Synapse Based on WOx Schottky Junction on Arbitrary Substrates,ADVANCED ELECTRONIC MATERIALS,2018年
  • 85. Structural Optimization of Oxide/Metal/Oxide Transparent Conductors for High-Performance Low-Emissivity Heaters,ADVANCED MATERIALS INTERFACES,2018年
  • 86. Three-dimensional hierarchical Ni3Se2 nanorod array as binder/carbon-free electrode for high-areal-capacity Na storage,NANOSCALE,2018年
  • 87. Solution-Grown Serpentine Silver Nanofiber Meshes for Stretchable Transparent Conductors,ADVANCED ELECTRONIC MATERIALS,2018年
  • 88. The Nature of Lithium-Ion Transport in Low Power Consumption LiFePO4 Resistive Memory with Graphite as Electrode,PHYS STATUS SOLIDI-R,2018年
  • 89. Graphite Microislands Prepared for Reliability Improvement of Amorphous Carbon Based Resistive Switching Memory,PHYS STATUS SOLIDI-R,2018年
  • 90. Highly uniform switching of HfO2-x based RRAM achieved through Ar plasma treatment for low power and multilevel storage,APPL SURF SCI,2018年
  • 91. High-temperature driven inter-valley carrier transfer and significant fluorescence enhancement in multilayer WS2,NANOSCALE HORIZONS,2018年
  • 92. Photocatalytic Reduction of Graphene Oxide-TiO2 Nanocomposites for Improving Resistive-Switching Memory Behaviors,SMALL,2018年
  • 93. Improved Uniformity and Endurance Through Suppression of Filament Overgrowth in Electrochemical Metallization Memory With AgInSbTe Buffer Layer,IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY,2018年
  • 94. Interface State-Induced Negative Differential Resistance Observed in Hybrid Perovskite Resistive Switching Memory,ACS APPLIED MATERIALS & INTERFACES,2018年
  • 95. The Auger process in multilayer WSe2 crystals,NANOSCALE,2018年
  • 96. Reversible alternation between bipolar and unipolar resistive switching in Ag/MoS2/Au structure for multilevel flexible memory,JOURNAL OF MATERIALS CHEMISTRY C,2018年
  • 97. TiC3 Monolayer with High Specific Capacity for Sodium-Ion Batteries,J AM CHEM SOC,2018年
  • 98. Color-Tunable ZnO/GaN Heterojunction LEDs Achieved by Coupling with Ag Nanowire Surface Plasmons,ACS APPLIED MATERIALS & INTERFACES,2018年
  • 99. Complementary resistive switching observed in graphene oxide-based memory device,IEEE ELECTR DEVICE L,2018年
  • 100. Analytical Modeling of Organic-Inorganic CH3NH3PbI3 Perovskite Resistive Switching and its Application for Neuromorphic Recognition,Advanced Theory and Simulations,2018年
  • 101. White LED based on CsPbBr3 nanocrystal phosphors via a facile two-step solution synthesis route,MATER RES BULL,2018年
  • 102. Accurate identification of layer number for few-layer WS2 and WSe2 via spectroscopic study,NANOTECHNOLOGY,2018年
  • 103. Oxidized carbon quantum dot-graphene oxide nanocomposites for improving data retention of resistive switching memory,JOURNAL OF MATERIALS CHEMISTRY C,2018年
  • 104. Improved switching reliability achieved in HfOx based RRAM with mountain-like surface-graphited carbon layer,APPL SURF SCI,2018年
  • 105. Enhanced Electroluminescence from ZnO Quantum Dot Light-Emitting Diodes via Introducing Al2O3 Retarding Layer and Ag@ZnO Hybrid Nanodots,ADVANCED OPTICAL MATERIALS,2017年
  • 106. Improved performance of Ta2O5-x resistive switching memory by Gd-doping: Ultralow power operation, good data retention, and multilevel storage,APPL PHYS LETT,2017年
  • 107. Vertical Bi2Se3 flakes array as Pt-free counter electrode for dye-sensitized solar cells,RSC ADVANCES,2017年
  • 108. ZnO量子点的制备及其在白光LED中的应用,发光学报,2017年
  • 109. Improved resistive switching reliability by using dual-layer nanoporous carbon structure,APPL PHYS LETT,2017年
  • 110. Significant improvement of near-UV electroluminescence from ZnO quantum dot LEDs via coupling with carbon nanodot surface plasmons,NANOSCALE,2017年
  • 111. Stable and metallic two-dimensional TaC2 as an anode material for lithium-ion battery,JOURNAL OF MATERIALS CHEMISTRY A,2017年
  • 112. Controlled Gas Molecules Doping of Monolayer MoS2 via Atomic-Layer-Deposited Al2O3 Films,ACS APPLIED MATERIALS & INTERFACES,2017年
  • 113. Flexible, transferable and conformal egg albumen based resistive switching memory devices,RSC ADVANCES,2017年
  • 114. p-NiO/n+-Si single heterostructure for one diode-one resistor memory applications,J ALLOY COMPD,2017年
  • 115. Sp2 clustering-induced improvement of resistive switching uniformity in Cu/amorphous carbon/Pt electrochemical metallization memory,JOURNAL OF MATERIALS CHEMISTRY C,2017年
  • 116. Transferable and flexible resistive switching memory devices based on PMMA films with embedded Fe3O4 nanoparticles,APPL PHYS LETT,2017年
  • 117. ATS21S项目中“合作问题解决”能力评价指标体系及启示,教育理论与实践,2017年
  • 118. Understanding the role of lithium sulfide clusters in lithium-sulfur batteries,JOURNAL OF MATERIALS CHEMISTRY A,2017年
  • 119. The role of graphene in enhancing electrical heating and mechanical performances of graphene-aligned silver nanowire hybrid transparent heaters,APPL PHYS LETT,2017年
  • 120. Pressure-Induced Stable Beryllium Peroxide,INORG CHEM,2017年
  • 121. Enhanced near-UV electroluminescence from p-GaN/i-Al2O3/n-ZnO heterojunction LEDs by optimizing the insulator thickness and introducing surface plasmons of Ag nanowires,JOURNAL OF MATERIALS CHEMISTRY C,2017年
  • 122. Enhancement of Exciton Emission from Multilayer MoS2 at High Temperatures: Intervalley Transfer versus Interlayer Decoupling,SMALL,2017年
  • 123. Enhanced Ultraviolet Random Lasing from Au/MgO/ZnO Heterostructure by Introducing p-Cu2O Hole-Injection Layer,ACS APPLIED MATERIALS & INTERFACES,2016年
  • 124. Reliability Improvement of Amorphous Carbon Based Resistive Switching Memory by Inserting Nanoporous Layer,IEEE ELECTR DEVICE L,2016年
  • 125. Coexistence of unipolar and bipolar modes in Ag/ZnO/Pt resistive switching memory with oxygen-vacancy and metal-Ag filaments,CHINESE PHYSICS B,2016年
  • 126. Abnormal high-temperature luminescence enhancement observed in monolayer MoS2 flakes: thermo-driven transition from negatively charged trions to neutral excitons,JOURNAL OF MATERIALS CHEMISTRY C,2016年
  • 127. Fabrication of silver nanowires and metal oxide composite transparent electrodes and their application in UV light-emitting diodes,J PHYS D APPL PHYS,2016年
  • 128. Highly Stable Transparent Electrodes Made from Copper Nanotrough Coated with AZO/Al2O3,J NANOSCI NANOTECHNO,2016年
  • 129. Highly stable copper wire/alumina/polyimide composite films for stretchable and transparent heaters,JOURNAL OF MATERIALS CHEMISTRY C,2016年
  • 130. Effect of SiO2 Spacer-layer Thickness on Localized Surface Plasmon-Enhanced ZnO Nanorod Array LEDs,ACS APPLIED MATERIALS & INTERFACES,2016年
  • 131. Forming-free electrochemical metallization resistive memory devices based on nanoporous TiOxNy thin film,J ALLOY COMPD,2016年
  • 132. Flexible transparent heaters based on silver nanotrough meshes,J ALLOY COMPD,2016年
  • 133. Coexistence of bipolar and unipolar resistive switching behaviors in the double-layer Ag/ZnS-Ag/CuAlO2/Pt memory device,APPL SURF SCI,2016年
  • 134. Two-step vapor transport deposition of large-size bridge-like Bi2Se3 nanostructures,CRYSTENGCOMM,2015年
  • 135. Bias-polarity-dependent UV/visible transferable electroluminescence from ZnO nanorod array LED with graphene oxide electrode supporting layer,APPLIED PHYSICS EXPRESS,2015年
  • 136. Effect of reset voltage polarity on the resistive switching region of unipolar memory,PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE,2015年
  • 137. Enhanced ultraviolet emission from Au/Ag-nanoparticles@MgO/ZnO heterostructure light-emitting diodes: A combined effect of exciton- and photon- localized surface plasmon couplings,OPT EXPRESS,2015年
  • 138. Modulation of electron transportation in amorphous and polycrystalline indium-zinc-oxide films grown by pulse laser deposition,J NON-CRYST SOLIDS,2015年
  • 139. Nonvolatile/volatile behaviors and quantized conductance observed in resistive switching memory based on amorphous carbon,CARBON,2015年
  • 140. Improved resistive switching characteristics by introducing Ag-nanoclusters in amorphous-carbon memory,MATER LETT,2015年
  • 141. Improvement of resistive switching memory achieved by using arc-shaped bottom electrode,APPLIED PHYSICS EXPRESS,2015年
  • 142. Enhanced waveguide-type ultraviolet electroluminescence from ZnO/MgZnO core/shell nanorod array light-emitting diodes via coupling with Ag nanoparticles localized surface plasmons,NANOSCALE,2015年
  • 143. Localized resistive switching in a ZnS-Ag/ZnS double-layer memory,J PHYS D APPL PHYS,2014年
  • 144. ZnO ultraviolet random laser diode on metal copper substrate,OPT EXPRESS,2014年
  • 145. Significant Enhancement of Yellow-Green Light Emission of TiO2 Thin Films Using Au Localized Surface Plasmons: Effect of Dielectric MgO Spacer Layer Thickness,J NANOSCI NANOTECHNO,2014年
  • 146. Recent progress in ZnO-based heterojunction ultraviolet light-emitting devices,CHINESE SCI BULL,2014年
  • 147. Ultraviolet electroluminescence from Au/MgO/MgxZn1-xO heterojunction diodes and the observation of Zn-rich cluster emission,J LUMIN,2014年
  • 148. Oxygen-concentration effect on p-type CuAlOx resistive switching behaviors and the nature of conducting filaments,APPL PHYS LETT,2014年
  • 149. Origin of ultraviolet electroluminescence in n-ZnO/p-GaN and n-MgZnO/p-GaN heterojunction light-emitting diodes,PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE,2013年
  • 150. Enhanced ultraviolet emission and improved spatial distribution uniformity of ZnO nanorod array light-emitting diodes via Ag nanoparticles decoration,NANOSCALE,2013年
  • 151. Performance improvement of resistive switching memory achieved by enhancing local-electric-field near electromigrated Ag-nanoclusters,NANOSCALE,2013年
  • 152. Anisotropic strained cubic MgZnO/MgO multiple-quantum-well nanorods:Growths and optical properties,APPL PHYS LETT,2013年
  • 153. Localized surface plasmon-enhanced ultraviolet electroluminescence from n-ZnO/i-ZnO/p-GaN heterojunction light-emitting diodes via optimizing the thickness of MgO spacer layer,APPL PHYS LETT,2012年
  • 154. Synaptic learning and memory functions achieved using oxygen ion migration/diffusion in an amorphous ingazno memristor,ADV FUNCT MATER,2012年
  • 155. Effect of oxygen-related surface adsorption on the efficiency and stability of ZnO nanorod array ultraviolet light-emitting diodes,APPL PHYS LETT,2012年
  • 156. MgZnO/MgO strained multiple-quantum-well nanocolumnar films: Stress-induced structural transition and deep ultraviolet emission,J ALLOY COMPD,2012年
  • 157. Optical and Electrical Properties of p-type ZnO∶N Films Grown by N-plasma Assisted Pulsed Laser Deposition,发光学报,2011年
  • 158. Flexible Resistive Switching Memory Device Based on Amorphous InGaZnO Film with Excellent Mechanical Endurance,IEEE ELECTR DEVICE L,2011年
  • 159. Electrically pumped near-ultraviolet lasing from ZnO/MgO core/shell nanowires,APPL PHYS LETT,2011年
  • 160. Synthesis, micro-structural and magnetic properties of Mn-doped ZnO nanowires,CRYSTENGCOMM,2011年
  • 161. Size-controlled growth of ZnO nanowires by catalyst-free high-pressure pulsed laser deposition and their optical properties,AIP Advances,2011年
  • 162. Superhydrophobic and ultraviolet-blocking cotton textiles,ACS APPLIED MATERIALS & INTERFACES,2011年
  • 163. Heteroepitaxial growth and spatially resolved cathodoluminescence of ZnO/MgZnO coaxial nanorod arrays,J PHYS CHEM C,2010年
  • 164. Effects of compliance currents on the formation and rupture of conducting filaments in unipolar resistive switching of CoO film,J PHYS D APPL PHYS,2010年
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