职  称:副教授
研究方向:忆阻材料与器件
办公电话:0431-85096166
办公地点:物理212

个人简历

赵晓宁, 副教授,博士生导师。目前主要从事碳基忆阻材料与器件研究工作,在高性能非晶碳忆阻材料/器件、忆阻器感存算一体化等方面开展了系列研究工作,以第一或通讯作者在Adv. Mater.、Adv. Funct. Mater.、IEEE EDL、Carbon、APL等国际期刊发表SCI论文30多篇,综述2篇,参编英文专著(章节)1部,申请/授权发明专利8项。2022-Wiley威立中国开放科学高贡献作者,中国物理学会/电子学会会员, IEEE Member。主持国家自然科学基金3项(青年、面上)和吉林省重点研发项目,获吉林省优秀青年基金支持。 课题组毕业生绝大部分到大中城市重点中学、重点高校、高新企业就业。欢迎有志基础研究的硕士生、博士生同学加入课题组:zhaoxn430@nenu.edu.cn 代表性学术成果: 1)Xiaoning Zhao, Zhongqiang Wang, Wentong Li, Shaowu Sun, Haiyang Xu,* Peng Zhou,* Jiaqi Xu, Ya Lin, and Yichun Liu* Photoassisted Electroforming Method for Reliable Low-Power Organic–Inorganic Perovskite Memristors. Adv. Funct. Mater. 2020, 30, 1910151. 2)Xiaoning Zhao, Jiaqi Xu, Dan Xie, Zhongqiang Wang, Haiyang Xu,* Ya Lin, Junli Hu, Yichun Liu*, Natural Acidic Polysaccharide-Based Memristors for Transient Electronics: Highly Controllable Quantized Conductance for Integrated Memory and Nonvolatile Logic Applications. Adv. Mater. 2021, 33, 2104023. 3) Qiaoling Tian, Xiaohan Zhang, Xiaoning Zhao,* Zhongqiang Wang,* Ya Lin, Haiyang Xu,* Yichun Liu, Dual Buffer Layers for Developing Electrochemical Metallization Memory With Low Current and High Endurance. IEEE Electron Device Lett. 2021, 42, 308-311. 4) Yue Wang, Xiaoning Zhao,* Jiaqi Xu, Xiaohan Zhang, Ye Tao, Ya Lin, Zhongqiang Wang,* Haiyang Xu,* Yichun Liu, Conductance Quantization in CH3NH3PbI3 Memristor. IEEE Electron Device Lett. 2022, 43, 1037-1040. 5)Jiaqi Xu, Xiaoning Zhao,* Zhongqiang Wang, Haiyang Xu,* Junli Hu, Jiangang Ma, Yichun Liu, Biodegradable Natural Pectin-Based Flexible MultilevelResistive Switching Memory for Transient Electronics. Small 2019, 15, 1803970. 6)Xiaoning Zhao, Zhongqiang Wang, Yu Xie, Haiyang Xu,* Jiaxue Zhu, Xintong Zhang,Weizhen Liu, Guochun Yang, Jiangang Ma,Yichun Liu*, Photocatalytic Reduction of Graphene Oxide–TiO2 Nanocomposites for Improving Resistive-Switching Memory Behaviors. Small 2018, 14, 1801325. 7)Xiaoning Zhao, Zhongqiang Wang,* Ya Lin, Haiyang Xu,* Yichun Liu, Resistive switching performance improvement of amorphous carbon-based electrochemical metallization memory via current stressing. Appl. Phys. Lett. 2019, 115, 073501. 8)Qiaoling Tian, Xiaoning Zhao,* Xiaohan Zhang, Huai Lin, Di Wang, Guozhong Xing,Zhongqiang Wang,* Ya Lin, Haiyang Xu, Yichun Liu, Thermal-assisted electroforming enables performance improvement by suppressing the overshoot current in amorphous carbon-based electrochemical metallization memory. Appl. Phys. Lett. 2021, 119, 143505. 9)Xiaohan Zhang, Xiaoning Zhao,* Xuanyu Shan, Qiaoling Tian, Zhongqiang Wang,* Ya Lin, Haiyang Xu,* Yichun Liu, Humidity Effect on Resistive Switching Characteristics of the CH3NH3PbI3 Memristor. ACS Appl. Mater. Interfaces 2021, 13, 28555−28563. 10)Qiaoling Tian, Xiaoning Zhao,* Ya Lin, Zhongqiang Wang,* Ye Tao, Haiyang Xu,* Yichun Liu, Thermal stable and low current complementary resistive switch with limited Cu source in amorphous carbon. Appl. Phys. Lett. 2022, 121, 183502. 11) Yiman Lu, Xiaoning Zhao,* Ya Lin, Peng Li, Ye Tao, Zhongqiang Wang, Jiangang Ma, Haiyang Xu,* Yichun Liu, Lightweight MXene/carbon composite foam with hollow skeleton for air-stable, high-temperature-resistant and compressible electromagnetic interference shielding. Carbon 2023, 206, 375–382. 12) Qiaoling Tian, Xiaoting Chen, Xiaoning Zhao,* Zhongqiang Wang, Ya Lin, Ye Tao, Haiyang Xu,* Yichun Liu, Temperature-modulated switching behaviors of diffusive memristor for biorealistic emulation of synaptic plasticity. Appl. Phys. Lett. 2023, 122, 153502. 13) Jiaqi Xu, Xuefei Wang, Xiaoning Zhao,* Dan Xie, Zhongqiang Wang,* Haiyang Xu,* Yichun Liu, Light-controlled stateful reconfigurable logic in a carbon dot-based optoelectronic memristor. Appl. Phys. Lett. 2024, 124, 073507. 14) Yiman Lu, Xiaoning Zhao,* Qiaoling Tian, Ya Lin, Peng Li, Ye Tao, Zhongqiang Wang,* Jiangang Ma, Haiyang Xu,* Yichun Liu, Hierarchical porous biomass-derived carbon with rich nitrogen doping for high-performance microwave absorption and tensile strain sensing. Carbon 2024, 224, 119083. 15)Xuefei Wang, Xiaoning Zhao,* Zhuangzhuang Li, Ye Tao, Zhongqiang Wang,* Ya Lin, Haiyang Xu,* Yichun Liu,A Self-powered Multimodal Sen-memory System. IEEE Electron Device Lett.2024, 45, 1189-1192. 科研项目: 1)基于离子“配位效应”的氧化石墨基忆阻功能层及其神经信号驱动器件研究,国家自然科学基金面上项目,2023/01-2026/12, 主持; 2)基于光还原效应的氧化石墨/二氧化钛复合光电忆阻材料及其视觉仿生器件研究, 国家自然科学基金面上项目,2021/01 - 2024/12, 主持; 3)金属/碳纳米胶囊微结构调控及微波频段电致多重介电极化效应研究,国家自然科学基金青年基金,2018/01 - 2020/12, 主持; 4)面向电磁隐身应用的磁性复合碳纤维制备技术研究,吉林省重点科技研发项目, 2021/07 - 2024/06, 主持; 5)碳基多模感知忆阻材料与类脑智能器件,吉林省优秀青年基金,2024/01 - 2026/12, 主持; 6) 氧化石墨烯局域微结构调控及其忆阻特性研究, 吉林省科技厅青年科研基金项目, 2018/01 - 2019/12, 主持。

社会兼职

获奖情况 (数据来源:科学技术处、社会科学处)

教学信息 (数据来源:教务处)

  • 光电材料概论
  • 综合物理实验34
  • 材料物理综合实验
  • 综合物理实验32
  • 综合物理实验
  • 近代物理实验20
  • 近代物理实验21
  • 大学物理实验B3
  • 近代物理实验16
  • 探索物理实验
  • 综合物理实验26
  • 探索物理实验61
  • 大学物理实验61
  • 近代物理实验17
  • 大学物理实验
  • 综合物理实验33
  • 探索物理实验71
  • 综合物理实验28
  • 大学物理实验62
  • 探索物理实验37
  • 近代物理实验22

科研信息 (数据来源:科学技术处、社会科学处)

  • 项目:
  • 1. 基于离子“配位效应”的氧化石墨基忆阻功能层及其神经信号驱动器件研究,国家自然科学基金项目,2022年
  • 2. 面向电磁隐身应用的磁性复合碳纤维制备技术研究,省、市、自治区科技项目,2021年
  • 3. 基于光还原效应的氧化石墨/二氧化钛复合光电忆阻材料及其视觉仿生器件研究,国家自然科学基金项目,2020年
  • 4. 基于非晶碳忆阻器的导电通道局域化方法研究,省、市、自治区科技项目,2018年
  • 5. 氧化石墨烯局域微结构调控及其忆阻特性研究,省、市、自治区科技项目,2018年
  • 6. 金属/碳纳米胶囊微结构调控及微波频段电致多重介电极化效应研究,国家自然科学基金项目,2018年
  • 专著:
  • 1. Advanced Memory Technology Functional Materials and Devices,Royal Society of Chemistry,09-1年
  • 2. Photo-Electroactive Nonvolatile Memories for Data Storage and Neuromorphic Computing,Elsevier,01-5年
  • 论文:
  • 1. A Self-Powered Multimodal Sen-Memory System,IEEE ELECTRON DEVICE LETTERS,2024年
  • 2. Hierarchical porous biomass-derived carbon with rich nitrogen doping for high-performance microwave absorption and tensile strain sensing,CARBON,2024年
  • 3. Fully light-modulated memristor based on ZnO/MoOx heterojunction for neuromorphic computing,APPLIED PHYSICS LETTERS,2024年
  • 4. Humidity-mediated synaptic plasticity in Ag loaded porous SiOx based memristor for multimodal neuromorphic sensory system,MATERIALS TODAY NANO,2024年
  • 5. Light-controlled stateful reconfigurable logic in a carbon dot-based optoelectronic memristor,APPLIED PHYSICS LETTERS,2024年
  • 6. Polygon Boolean operations and physical unclonable functions implemented by an Ag-embedded sodium-alginate-based memristor for image encryption/decryption,APPLIED PHYSICS LETTERS,2024年
  • 7. Advances in memristor based artificial neuron fabrication-materials, models, and applications,INTERNATIONAL JOURNAL OF EXTREME MANUFACTURING,2024年
  • 8. Biodegradable and flexible i-carrageenan based RRAM with ultralow power consumption,CHINESE PHYSICS B,2024年
  • 9. Tin Doping Induced High-Performance Solution-Processed Ga2O3 Photosensor toward Neuromorphic Visual System,ADVANCED FUNCTIONAL MATERIALS,2023年
  • 10. Direct Observation of Oxygen Ion Dynamics in a WO3-x based Second-Order Memristor with Dendritic Integration Functions,ADVANCED FUNCTIONAL MATERIALS,2023年
  • 11. Polyacrylonitrile Passivation for Enhancing the Optoelectronic Switching Performance of Halide Perovskite Memristor for Image Boolean Logic Applications,NANOMATERIALS,2023年
  • 12. A true random number generator based on double threshold-switching memristors for image encryption,APPLIED PHYSICS LETTERS,2023年
  • 13. Doppler Frequency-Shift Information Processing in WOx-Based Memristive Synapse for Auditory Motion Perception,ADVANCED SCIENCE,2023年
  • 14. Temperature-modulated switching behaviors of diffusive memristor for biorealistic emulation of synaptic plasticity,APPLIED PHYSICS LETTERS,2023年
  • 15. Multi-Wavelength-Recognizable Memristive Devices via Surface Plasmon Resonance Effect for Color Visual System,SMALL,2023年
  • 16. Lightweight MXene/carbon composite foam with hollow skeleton for air-stable, high-temperature-resistant and compressible electromagnetic interference shielding,CARBON,2023年
  • 17. Optoelectronic synaptic device based on ZnO/HfOx heterojunction for high-performance neuromorphic vision system,APPLIED PHYSICS LETTERS,2022年
  • 18. Thermal stable and low current complementary resistive switch with limited Cu source in amorphous carbon,APPLIED PHYSICS LETTERS,2022年
  • 19. 碳量子点修饰对有机-无机杂化钙钛矿阻变性能的影响,物理实验,2022年
  • 20. Real-time numerical system convertor via two-dimensional WS2-based memristive device,FRONTIERS IN COMPUTATIONAL NEUROSCIENCE,2022年
  • 21. Flexible TiN/Co@Carbon nanofiber mats for high-performance electromagnetic interference shielding and Joule heating applications,CARBON,2022年
  • 22. Memristors with Biomaterials for Biorealistic Neuromorphic Applications,Small science,2022年
  • 23. A Stacked Memristive Device Enabling Both Analog and Threshold Switching Behaviors for Artificial Leaky Integrate and Fire Neuron,IEEE ELECTRON DEVICE LETTERS,2022年
  • 24. Conductance Quantization in CH3NH3PbI3 Memristor,IEEE ELECTRON DEVICE LETTERS,2022年
  • 25. 新工科背景下师范院校智能芯片与系统方向产教融合人才培养模式的探索,科教导刊,2022年
  • 26. Photocatalysis-Induced Nanopores toward Highly Reliable Organic Electrochemical Metallization Memory,ADVANCED ELECTRONIC MATERIALS,2022年
  • 27. Pavlovian conditioning achieved via one-transistor/one-resistor memristive synapse,APPLIED PHYSICS LETTERS,2022年
  • 28. Plasmonic Optoelectronic Memristor Enabling Fully Light-Modulated Synaptic Plasticity for Neuromorphic Vision,ADVANCED SCIENCE,2022年
  • 29. Natural Acidic Polysaccharide-Based Memristors for Transient Electronics: Highly Controllable Quantized Conductance for Integrated Memory and Nonvolatile Logic Applications,ADVANCED MATERIALS,2021年
  • 30. Thermal-assisted electroforming enables performance improvement by suppressing the overshoot current in amorphous carbon-based electrochemical metallization memory,APPLIED PHYSICS LETTERS,2021年
  • 31. Rapid microwave annealing of CH3NH3PbI3 with controllable crystallization for enhancing the resistive-switching performance,SEMICOND SCI TECH,2021年
  • 32. High switching uniformity and 50 fJ/bit energy consumption achieved in amorphous silicon-based memristive device with an AgInSbTe buffer layer,APPL PHYS LETT,2021年
  • 33. Humidity Effect on Resistive Switching Characteristics of the CH3NH3PbI3 Memristor,ACS APPLIED MATERIALS & INTERFACES,2021年
  • 34. 基于果胶材料的阻变存储器离子缓冲层研究,物理实验,2021年
  • 35. Zeolite-Based Memristive Synapse with Ultralow Sub-10-fJ Energy Consumption for Neuromorphic Computation,SMALL,2021年
  • 36. Self-Powered Memristive Systems for Storage and Neuromorphic Computing,FRONTIERS IN NEUROSCIENCE,2021年
  • 37. Nitrogen-induced ultralow power switching in flexible ZnO-based memristor for artificial synaptic learning,APPL PHYS LETT,2021年
  • 38. Dual Buffer Layers for Developing Electrochemical Metallization Memory With Low Current and High Endurance,IEEE ELECTR DEVICE L,2021年
  • 39. Flexible and transparent memristive synapse based on polyvinylpyrrolidone/N-doped carbon quantum dot nanocomposites for neuromorphic computing,NANOSCALE ADVANCES,2021年
  • 40. Neutron irradiation-induced effects on the reliability performance of electrochemical metallization memory devices,JOURNAL OF SEMICONDUCTORS,2021年
  • 41. Voltage-dependent plasticity and image Boolean operations realized in a WO x -based memristive synapse,JOURNAL OF SEMICONDUCTORS,2021年
  • 42. Photoreduced nanocomposites of graphene oxide/N-doped carbon dots toward all-carbon memristive synapses,NPG ASIA MATERIALS,2020年
  • 43. Photo-tunable organic resistive random access memory based on PVP/N-doped carbon dot nanocomposites for encrypted image storage,JOURNAL OF MATERIALS CHEMISTRY C,2020年
  • 44. Silent Synapse Activation by Plasma-Induced Oxygen Vacancies in TiO2 Nanowire-Based Memristor,ADVANCED ELECTRONIC MATERIALS,2020年
  • 45. Reduced Graphene Oxide Conformally Wrapped Silver Nanowire Networks for Flexible Transparent Heating and Electromagnetic Interference Shielding,ACS NANO,2020年
  • 46. Reliable restriction of conductive filament in graphene oxide based RRAM devices enabled by a locally graphitized amorphous carbon layer,JPN J APPL PHYS,2020年
  • 47. Toward a generalized Bienenstock-Cooper-Munro rule for spatiotemporal learning via triplet-STDP in memristive devices,Nature Communications,2020年
  • 48. Photoassisted Electroforming Method for Reliable Low-Power Organic-Inorganic Perovskite Memristors,ADV FUNCT MATER,2020年
  • 49. Moisture-powered memristor with interfacial oxygen migration for power-free reading of multiple memory states,NANO ENERGY,2020年
  • 50. Analytical modeling of electrochemical metallization memory device with dual-layer structure of Ag/AgInSbTe/amorphous C/Pt,SEMICOND SCI TECH,2020年
  • 51. Resistive switching performance improvement of amorphous carbon-based electrochemical metallization memory via current stressing,APPL PHYS LETT,2019年
  • 52. Memristors with organic-inorganic halide perovskites,InfoMat,2019年
  • 53. Analog-Digital Hybrid Memristive Devices for Image Pattern Recognition with Tunable Learning Accuracy and Speed,Small Methods,2019年
  • 54. Biodegradable Natural Pectin-Based Flexible Multilevel Resistive Switching Memory for Transient Electronics,SMALL,2019年
  • 55. Multilevel Resistive Switching in P-N Heterostructure Memory,J NANOSCI NANOTECHNO,2019年
  • 56. Insertion of Nanoscale AgInSbTe Layer between the Ag Electrode and the CH3NH3PbI3 Electrolyte Layer Enabling Enhanced Multilevel Memory,ACS Applied Nano Materials,2019年
  • 57. Cycling-Induced Degradation of Organic-Inorganic Perovskite-Based Resistive Switching Memory,ADVANCED MATERIALS TECHNOLOGIES,2019年
  • 58. Intensity-modulated LED achieved through integrating p-GaN/n-ZnO heterojunction with multilevel RRAM,APPL PHYS LETT,2018年
  • 59. Transferable and Flexible Artificial Memristive Synapse Based on WOx Schottky Junction on Arbitrary Substrates,ADVANCED ELECTRONIC MATERIALS,2018年
  • 60. Electric-Field-Triggered Electromagnetic Polarizations in the Close-Packed Fe at C Nanocapsules,IEEE TRANSACTIONS ON MAGNETICS,2018年
  • 61. Ultralight and ultraelastic sponge/Al@Al2O3 nanocomposite with tunable electromagnetic properties,J APPL PHYS,2018年
  • 62. The Nature of Lithium-Ion Transport in Low Power Consumption LiFePO4 Resistive Memory with Graphite as Electrode,PHYS STATUS SOLIDI-R,2018年
  • 63. Graphite Microislands Prepared for Reliability Improvement of Amorphous Carbon Based Resistive Switching Memory,PHYS STATUS SOLIDI-R,2018年
  • 64. Highly uniform switching of HfO2-x based RRAM achieved through Ar plasma treatment for low power and multilevel storage,APPL SURF SCI,2018年
  • 65. Photocatalytic Reduction of Graphene Oxide-TiO2 Nanocomposites for Improving Resistive-Switching Memory Behaviors,SMALL,2018年
  • 66. Reversible alternation between bipolar and unipolar resistive switching in Ag/MoS2/Au structure for multilevel flexible memory,JOURNAL OF MATERIALS CHEMISTRY C,2018年
  • 67. Complementary resistive switching observed in graphene oxide-based memory device,IEEE ELECTR DEVICE L,2018年
  • 68. Analytical Modeling of Organic-Inorganic CH3NH3PbI3 Perovskite Resistive Switching and its Application for Neuromorphic Recognition,Advanced Theory and Simulations,2018年
  • 69. Oxidized carbon quantum dot-graphene oxide nanocomposites for improving data retention of resistive switching memory,JOURNAL OF MATERIALS CHEMISTRY C,2018年
  • 70. Improved switching reliability achieved in HfOx based RRAM with mountain-like surface-graphited carbon layer,APPL SURF SCI,2018年
  • 71. Improved performance of Ta2O5-x resistive switching memory by Gd-doping: Ultralow power operation, good data retention, and multilevel storage,APPL PHYS LETT,2017年
  • 72. Sp2 clustering-induced improvement of resistive switching uniformity in Cu/amorphous carbon/Pt electrochemical metallization memory,JOURNAL OF MATERIALS CHEMISTRY C,2017年
  • 专利:
  • 一种基于非晶碳的低电流热稳定互补型忆阻器及其制备方法 2024-02-09
  • 图像模式识别模拟与数字混合忆阻设备及制备,实现STDP学习规则和图像模式识别方法 2023-05-23
  • 一种包含双缓冲层的低电流长寿命忆阻器及其制备方法 2023-03-24
  • 一种双极性无极性可逆互转型阻变存储器及其制备方法 2022-08-09
  • 一种基于晶体管和忆阻器的模拟联想学习电路及控制方法 2022-08-02
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