王中强

科研项目情况：
1. 国家自然科学基金面上项目, 基于忆阻器nT1R构架实现多级阻态渐变调控的人工神经突触器件研究，63万，2018.01-2021.12，主持。
2. 国家自然科学基金面上项目, 基于氧化物/贵金属的光电忆阻效应研究及光门控人工突触器件，63万，2020.01-2023.12，主持。
3. 国家自然科学基金重点项目,氧化物忆阻材料与人工器件, 310万 2018.01-2022.12, 参加。
4. 东北师范大学青年骨干培育基金, 50万, 1T1R结构忆阻器件构筑及其应用研究, 2016.04-2017.11, 主持。
5. 国家自然科学基金青年项目, 界面调控对氧化物基忆阻器动态电学行为的影响及其神经突触仿生研究, 26万，2015.01-2017.12，主持。
6. 吉林省科技项目青年项目, 基于p-CuAlO2/ n-ZnO异质结空间电荷区宽度调制的新型忆阻器件及其神经突触仿生研究,  5万，2014.01-2016.12，主持。

研究成果：
1.发表论文（第一作者及通讯作者）
2018年：
(1)	Meng Qi, Liang Bai, Haiyang Xu, * Zhongqiang Wang,* Zhenhui Kang, Xiaoning Zhao, Weizhen Liu, Jiangang Ma and Yichun Liu, Oxidized carbon quantum dots-graphene oxide nanocomposites for improving data retention of resistive switching memory, J. Mater. Chem.C, 2018, 2018, 6, 2026
(2)	Yanyun Ren, Valerio Milo, Zhongqiang Wang*, Haiyang Xu*, Daniele Ielmini*, Xiaoning Zhao,Yichun Liu, Analytical modeling of organic−inorganic CH₃NH₃PbI₃ perovskite resistive switching and its application for neuromorphic recognition, Advanced Theory and Simulations, 2018, adts.201700035R1
(3)	Ye Tao, Wentao, Ding,  Zhongqiang Wang*, Haiyang Xu*, Xiaoning Zhao, Xuhong Li, Weizhen Liu, Jiangang Ma, Yichun Liu Improved switching reliability achieved in HfOx based RRAM with mountain-like surface-graphited carbon layer, Applied Surface Science, 2018, 440, Pages 107-112
(4)	Kaixi Shi, Zhongqiang Wang(共同一作)， Haiyang Xu*，Zhe Xu， Xiaohan Zhang， Xiaoning Zhao, Weizhen Liu, Guochun Yang, Yichun Liu, Complementary Resistive Switching Observed in Graphene Oxide-Based Memory Device, IEEE Electron Device Letters, 39, 4, 488 - 491
……
2017年：
(1)  Y. Tao, X. H. Li, Z. Q. Wang*, H. Y. Xu*, W.T. Ding, J. G. Ma, Y. C. Liu, Improved resistive switching reliability by using dual-layer nanoporous carbon structure, Appl. Phys. Lett., 2017, 111, 183504.
(2)  K. X. Shi, H. Y. Xu*, Z. Q. Wang*, X. N. Zhao, W. Z. Liu, J. G. Ma, Y. C. Liu, Improved performance of Ta2O5-x resistive switching memory by Gd-doping: Ultralow power operation, good data retention, and multilevel storage, Appl.Phys.Lett., 2017, 111, 223505 
(3)  X. N. Zhao, H. Y. Xu, Z. Q. Wang*, Z Xu, C. Zhang, G.R. Wang, W. Z. Liu, J. G. Ma, Y. C. Liu, “Sp2 clustering-induced improvement of resistive switching uniformity in Cu/amorphous carbon/Pt electrochemical metallization memory” J. Mater. Chem.C. 5, 5420 (2017).
(4)  Y. Lin, H. Y. Xu, Z. Q. Wang*, T. Cong, W. Z. Liu, H. L. Ma, Y. C. Liu, “Transferable and flexible resistive switching memory devices based on PMMA films with embedded Fe3O4 nanoparticles” Appl. Phys. Lett. 110, 193503 (2017)
(5)  J. X. Zhu, W. L. Zhou, Z. Q. Wang*, H. Y. Xu *, Y. Lin, W. Z. Liu, J. G. Ma and Y. C. Liu, “Flexible, transferable and conformal egg albumen based resistive switching memory devices” RSC Adv. 7, 32114 (2017).
(6)  L. Zhang, H. Y. Xu, Z. Q. Wang*, W. Z. Liu, K. X. Shi, Y. Lin, Y. C. Liu. “p-NiO/n+-Si single heterostructure for one diode-one resistor memory applications” J. Alloy. Compd, 721, 520 (2017).


2016年：
(1)  Z. Q. Wang, S. Ambrogio, S. Balatti, S. Sills, N. Ramaswamy, D. Ielmini. “Postcycling Degradation in Metal-Oxide Bipolar  Resistive Switching Memory”, IEEE TED, 63, 4279 (2016).  
(2)  X. N. Zhao, Z. Q. Wang*, H. Y. Xu, Y. Xie, H. L. Ma, J. G. Ma, Y. C. Liu. “Reliability Improvement of Amorphous Carbon Based Resistive Switching Memory by Inserting Nanoporous Layer” IEEE EDL. 37, 1430 (2016).
(3)	X. N. Zhao, M. Y. Li, H. Y. Xu, Z. Q. Wang*, C. Zhang, W. Z. Liu, J. G. Ma, Y. C. Liu, Forming-free electrochemical metallization resistive memory devices based on nanoporous TiOxNy thin film, J. Alloy. Compd, 656, 612 (2016).
(4)  H. L. Ma, Z. Q. Wang*, H. Y. Xu, L. Zhang, X. N. Zhao, M. S. Han, J. G. Ma, Y. C. Liu, “Coexistence of unipolar and bipolar modes in Ag/ZnO/Pt resistive switching memory with oxygen-vacancy and metal-Ag filaments” Chin. Phys. B, 25, 127303 (2016).
(5)  L. Zhang, H. Y. Xu, Z. Q. Wang*, H. Yu, J. G. Ma, Y. C. Liu, “Coexistence of bipolar and unipolar resistive switching behaviors in the double-layer Ag/ZnS-Ag/CuAlO2/Pt memory device” Appl. Surf. Sci. 360, 338 (2016).

2015年：
(1)	Z. Q. Wang, S. Ambrogio, S. Balatti, S. Sills, A. Calderoni, N. Ramaswamy, D. Ielmini “Cycling-induced degradation of metal-oxide resistive switching memory (RRAM)” IEDM Tech. Dig., 173-176, (2015).
(2)	Z. Q. Wang, S. Ambrogio, S. Balatti, and D. Ielmini,  A 2-transistor/1-resistor artificial synapse capable of communication and stochastic learning in neuromorphic systems, Frontiers in Neuroscience 8, 438 (2015).
(3)	Z. Q. Wang, K. D. Zhao, H. Y. Xu*, L. Zhang, J. G. Ma, Y. C. Liu*, Improvement of resistive switching memory achieved by using arc-shaped bottom electrode, Applied Physics Express, 8, 014101,(2015) .
(4)	Z. Q. Wang, H. Y. Xu, L. Zhang, X. N. Zhao, J. G. Ma, and Y. C. Liu, Effect of reset voltage polarity on the resistive switching region of nonpolar memories, Phys. Status Solidi A, 212, 2255 (2015).
(5)	L. Zhang, H. Y. Xu, Z. Q. Wang*, X. N. Zhao, J. G. Ma, Y. C. Liu, Improved resistive switching characteristics by introducing Ag-nanoclusters in amorphous-carbon memory, Mater. Lett, 154, 98 (2015).
(6)	Z. Q. Wang, H. Y. Xu*, X. H. Li, H. Yu, Y. C. Liu*, X. J. Zhu, Synaptic learning and memory functions achieved using oxygen ion migration/diffusion in an amorphous InGaZnO memristor, Advanced Functional Materials, 22(13), 2759, (2012).
(7) Z. Q. Wang, H. Y. Xu*, L. Zhang, X. H. Li, J. G. Ma, X. T. Zhang, Y. C. Liu*, Performance improvement of resistive switching memory achieved by enhancing local-electric-field near electromigrated Ag-nanoclusters, Nanoscale  5, 4490 (2013). 
(8)	Z. Q. Wang, H. Y. Xu*, X. H. Li, X. T. Zhang, Y. X. Liu, Y. C. Liu*, Flexible resistive switching memory device based on amorphous InGaZnO film with excellent mechanical endurance, IEEE Electron Device Letters, 32(10), 1442, (2011). 
(9)	Z. Q. Wang, X. H. Li, H. Y. Xu, W. Wang, H. Yu, X. T. Zhang, Y. X. Liu*, Y. C. Liu, Effects of compliance currents on the formation and rupture of conducting filaments in unipolar resistive switching of CoO film, Journal of Physics D-Applied Physics, 43(38), 385105, (2010). 

2.	发明专利：
(1)	徐海阳、王中强、张磊、于浩、李兴华、刘益春，基于非晶多元金属氧化物的柔性电阻式非易失性存储器，2011.8，中国，201110241003.0
(2)	徐海阳、张磊、王中强、于浩、刘益春，基于PN异质结构的忆阻器及其制备方法，2014.2，中国，201410066313.7
(3)	“New artificial synapse for neuromorphic circuits”, U.S. Patent application,  2015.3.
(4) 徐海阳，王中强，黎旭红，陶冶，刘益春，一种抑制银导电通道过量生长的阻变存储器及其制备方法，申请号：201710584338.X
(5) 徐海阳，王中强，朱佳雪，谢瑜，黎旭红，刘益春, 一种基于氧化石墨烯的高稳定性阻变存储器，申请号：201710441373.6
(6) 徐海阳，王中强，陶冶，黎旭红，刘益春，一种双层多孔结构非晶碳材料的阻变存储器及其制备方法，申请号：201710317742.0