王中强

项目：
1. 晶圆级铪基陡峭铁电晶体管器件研究，国家科技部，2024年
2. 面向电子器件-生物神经接口界面的双离子调制型忆阻材料与类神经元器件研究，国家自然科学基金项目，2024年
3. 光电忆阻材料与器件创新团队，其他课题，2021年
4. 基于氧化物/贵金属的光电忆阻效应研究及光门控人工突触器件，国家自然科学基金项目，2019年
5. 高可靠性忆阻器的构建及其神经突触仿生应用研究，省、市、自治区科技项目，2018年
6. 基于忆阻器nT1R构架实现多级阻态渐变调控的人工神经突触器件研究，国家自然科学基金项目，2017年
7. 1T1R结构忆阻器件构筑及其应用研究，主管部门科技项目，2016年
专著：
1. Advanced Memory Technology Functional Materials and Devices，Royal Society of Chemistry，09-1年
2. Photo-Electroactive Nonvolatile Memories for Data Storage and Neuromorphic Computing，Elsevier，01-5年
论文：
1. A Self-Powered Multimodal Sen-Memory System，IEEE ELECTRON DEVICE LETTERS，2024年
2. Hierarchical porous biomass-derived carbon with rich nitrogen doping for high-performance microwave absorption and tensile strain sensing，CARBON，2024年
3. Fully light-modulated memristor based on ZnO/MoOx heterojunction for neuromorphic computing，APPLIED PHYSICS LETTERS，2024年
4. Humidity-mediated synaptic plasticity in Ag loaded porous SiOx based memristor for multimodal neuromorphic sensory system，MATERIALS TODAY NANO，2024年
5. Light-controlled stateful reconfigurable logic in a carbon dot-based optoelectronic memristor，APPLIED PHYSICS LETTERS，2024年
6. Polygon Boolean operations and physical unclonable functions implemented by an Ag-embedded sodium-alginate-based memristor for image encryption/decryption，APPLIED PHYSICS LETTERS，2024年
7. Advances in memristor based artificial neuron fabrication-materials, models, and applications，INTERNATIONAL JOURNAL OF EXTREME MANUFACTURING，2024年
8. Biodegradable and flexible i-carrageenan based RRAM with ultralow power consumption，CHINESE PHYSICS B，2024年
9. Tin Doping Induced High-Performance Solution-Processed Ga2O3 Photosensor toward Neuromorphic Visual System，ADVANCED FUNCTIONAL MATERIALS，2023年
10. Direct Observation of Oxygen Ion Dynamics in a WO3-x based Second-Order Memristor with Dendritic Integration Functions，ADVANCED FUNCTIONAL MATERIALS，2023年
11. Design and Simulation Analysis of a 3TnC MLC FeRAM Using a Nondestructive Readout and Offset-Canceled Sense Amplifier for High-Density Storage Applications，MICROMACHINES，2023年
12. Polyacrylonitrile Passivation for Enhancing the Optoelectronic Switching Performance of Halide Perovskite Memristor for Image Boolean Logic Applications，NANOMATERIALS，2023年
13. Self-powered and broadband opto-sensor with bionic visual adaptation function based on multilayer gamma-InSe flakes，LIGHT-SCIENCE & APPLICATIONS，2023年
14. A RRAM-Based True Random Number Generator with 2T1R Architecture for Hardware Security Applications，MICROMACHINES，2023年
15. A true random number generator based on double threshold-switching memristors for image encryption，APPLIED PHYSICS LETTERS，2023年
16. Doppler Frequency-Shift Information Processing in WOx-Based Memristive Synapse for Auditory Motion Perception，ADVANCED SCIENCE，2023年
17. Temperature-modulated switching behaviors of diffusive memristor for biorealistic emulation of synaptic plasticity，APPLIED PHYSICS LETTERS，2023年
18. Multi-Wavelength-Recognizable Memristive Devices via Surface Plasmon Resonance Effect for Color Visual System，SMALL，2023年
19. Lightweight MXene/carbon composite foam with hollow skeleton for air-stable, high-temperature-resistant and compressible electromagnetic interference shielding，CARBON，2023年
20. Optoelectronic synaptic device based on ZnO/HfOx heterojunction for high-performance neuromorphic vision system，APPLIED PHYSICS LETTERS，2022年
21. Thermal stable and low current complementary resistive switch with limited Cu source in amorphous carbon，APPLIED PHYSICS LETTERS，2022年
22. Real-time numerical system convertor via two-dimensional WS2-based memristive device，FRONTIERS IN COMPUTATIONAL NEUROSCIENCE，2022年
23. Memristors with Biomaterials for Biorealistic Neuromorphic Applications，Small science，2022年
24. A Stacked Memristive Device Enabling Both Analog and Threshold Switching Behaviors for Artificial Leaky Integrate and Fire Neuron，IEEE ELECTRON DEVICE LETTERS，2022年
25. Conductance Quantization in CH3NH3PbI3 Memristor，IEEE ELECTRON DEVICE LETTERS，2022年
26. Photocatalysis-Induced Nanopores toward Highly Reliable Organic Electrochemical Metallization Memory，ADVANCED ELECTRONIC MATERIALS，2022年
27. 面向感存算一体化的光电忆阻器件研究进展，ACTA PHYSICA SINICA，2022年
28. Pavlovian conditioning achieved via one-transistor/one-resistor memristive synapse，APPLIED PHYSICS LETTERS，2022年
29. Plasmonic Optoelectronic Memristor Enabling Fully Light-Modulated Synaptic Plasticity for Neuromorphic Vision，ADVANCED SCIENCE，2022年
30. Natural Acidic Polysaccharide-Based Memristors for Transient Electronics: Highly Controllable Quantized Conductance for Integrated Memory and Nonvolatile Logic Applications，ADVANCED MATERIALS，2021年
31. Thermal-assisted electroforming enables performance improvement by suppressing the overshoot current in amorphous carbon-based electrochemical metallization memory，APPLIED PHYSICS LETTERS，2021年
32. Rapid microwave annealing of CH3NH3PbI3 with controllable crystallization for enhancing the resistive-switching performance，SEMICOND SCI TECH，2021年
33. High switching uniformity and 50 fJ/bit energy consumption achieved in amorphous silicon-based memristive device with an AgInSbTe buffer layer，APPL PHYS LETT，2021年
34. Humidity Effect on Resistive Switching Characteristics of the CH3NH3PbI3 Memristor，ACS APPLIED MATERIALS & INTERFACES，2021年
35. Zeolite-Based Memristive Synapse with Ultralow Sub-10-fJ Energy Consumption for Neuromorphic Computation，SMALL，2021年
36. Flexible and degradable resistive switching memory fabricated with sodium alginate，CHINESE PHYSICS B，2021年
37. Self-Powered Memristive Systems for Storage and Neuromorphic Computing，FRONTIERS IN NEUROSCIENCE，2021年
38. Nitrogen-induced ultralow power switching in flexible ZnO-based memristor for artificial synaptic learning，APPL PHYS LETT，2021年
39. Dual Buffer Layers for Developing Electrochemical Metallization Memory With Low Current and High Endurance，IEEE ELECTR DEVICE L，2021年
40. Flexible and transparent memristive synapse based on polyvinylpyrrolidone/N-doped carbon quantum dot nanocomposites for neuromorphic computing，NANOSCALE ADVANCES，2021年
41. Neutron irradiation-induced effects on the reliability performance of electrochemical metallization memory devices，JOURNAL OF SEMICONDUCTORS，2021年
42. Voltage-dependent plasticity and image Boolean operations realized in a WO x -based memristive synapse，JOURNAL OF SEMICONDUCTORS，2021年
43. Photoreduced nanocomposites of graphene oxide/N-doped carbon dots toward all-carbon memristive synapses，NPG ASIA MATERIALS，2020年
44. Photo-tunable organic resistive random access memory based on PVP/N-doped carbon dot nanocomposites for encrypted image storage，JOURNAL OF MATERIALS CHEMISTRY C，2020年
45. Silent Synapse Activation by Plasma-Induced Oxygen Vacancies in TiO2 Nanowire-Based Memristor，ADVANCED ELECTRONIC MATERIALS，2020年
46. Toward a generalized Bienenstock-Cooper-Munro rule for spatiotemporal learning via triplet-STDP in memristive devices，Nature Communications，2020年
47. Photoassisted Electroforming Method for Reliable Low-Power Organic-Inorganic Perovskite Memristors，ADV FUNCT MATER，2020年
48. Moisture-powered memristor with interfacial oxygen migration for power-free reading of multiple memory states，NANO ENERGY，2020年
49. Analytical modeling of electrochemical metallization memory device with dual-layer structure of Ag/AgInSbTe/amorphous C/Pt，SEMICOND SCI TECH，2020年
50. Resistive switching performance improvement of amorphous carbon-based electrochemical metallization memory via current stressing，APPL PHYS LETT，2019年
51. Memristors with organic-inorganic halide perovskites，InfoMat，2019年
52. 基于HfNx:Zn薄膜的负微分阻变存储器，物理实验，2019年
53. Analog-Digital Hybrid Memristive Devices for Image Pattern Recognition with Tunable Learning Accuracy and Speed，Small Methods，2019年
54. Biodegradable Natural Pectin-Based Flexible Multilevel Resistive Switching Memory for Transient Electronics，SMALL，2019年
55. Insertion of Nanoscale AgInSbTe Layer between the Ag Electrode and the CH3NH3PbI3 Electrolyte Layer Enabling Enhanced Multilevel Memory，ACS Applied Nano Materials，2019年
56. Cycling-Induced Degradation of Organic-Inorganic Perovskite-Based Resistive Switching Memory，ADVANCED MATERIALS TECHNOLOGIES，2019年
57. Intensity-modulated LED achieved through integrating p-GaN/n-ZnO heterojunction with multilevel RRAM，APPL PHYS LETT，2018年
58. Transferable and Flexible Artificial Memristive Synapse Based on WOx Schottky Junction on Arbitrary Substrates，ADVANCED ELECTRONIC MATERIALS，2018年
59. Stretchable and conformable synapse memristors for wearable and implantable electronics，NANOSCALE，2018年
60. The Nature of Lithium-Ion Transport in Low Power Consumption LiFePO4 Resistive Memory with Graphite as Electrode，PHYS STATUS SOLIDI-R，2018年
61. Graphite Microislands Prepared for Reliability Improvement of Amorphous Carbon Based Resistive Switching Memory，PHYS STATUS SOLIDI-R，2018年
62. Highly uniform switching of HfO2-x based RRAM achieved through Ar plasma treatment for low power and multilevel storage，APPL SURF SCI，2018年
63. Photocatalytic Reduction of Graphene Oxide-TiO2 Nanocomposites for Improving Resistive-Switching Memory Behaviors，SMALL，2018年
64. Improved Uniformity and Endurance Through Suppression of Filament Overgrowth in Electrochemical Metallization Memory With AgInSbTe Buffer Layer，IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY，2018年
65. Interface State-Induced Negative Differential Resistance Observed in Hybrid Perovskite Resistive Switching Memory，ACS APPLIED MATERIALS & INTERFACES，2018年
66. Reversible alternation between bipolar and unipolar resistive switching in Ag/MoS2/Au structure for multilevel flexible memory，JOURNAL OF MATERIALS CHEMISTRY C，2018年
67. Color-Tunable ZnO/GaN Heterojunction LEDs Achieved by Coupling with Ag Nanowire Surface Plasmons，ACS APPLIED MATERIALS & INTERFACES，2018年
68. Complementary resistive switching observed in graphene oxide-based memory device，IEEE ELECTR DEVICE L，2018年
69. Analytical Modeling of Organic-Inorganic CH3NH3PbI3 Perovskite Resistive Switching and its Application for Neuromorphic Recognition，Advanced Theory and Simulations，2018年
70. White LED based on CsPbBr3 nanocrystal phosphors via a facile two-step solution synthesis route，MATER RES BULL，2018年
71. 基于 ZNO 纳米线／PMMA复合材料的柔性阻变式随机存储器，物理实验，2018年
72. Oxidized carbon quantum dot-graphene oxide nanocomposites for improving data retention of resistive switching memory，JOURNAL OF MATERIALS CHEMISTRY C，2018年
73. Improved switching reliability achieved in HfOx based RRAM with mountain-like surface-graphited carbon layer，APPL SURF SCI，2018年
74. Enhanced Electroluminescence from ZnO Quantum Dot Light-Emitting Diodes via Introducing Al2O3 Retarding Layer and Ag@ZnO Hybrid Nanodots，ADVANCED OPTICAL MATERIALS，2017年
75. Improved performance of Ta2O5-x resistive switching memory by Gd-doping: Ultralow power operation, good data retention, and multilevel storage，APPL PHYS LETT，2017年
76. Improved resistive switching reliability by using dual-layer nanoporous carbon structure，APPL PHYS LETT，2017年
77. Flexible, transferable and conformal egg albumen based resistive switching memory devices，RSC ADVANCES，2017年
78. p-NiO/n+-Si single heterostructure for one diode-one resistor memory applications，J ALLOY COMPD，2017年
79. Sp2 clustering-induced improvement of resistive switching uniformity in Cu/amorphous carbon/Pt electrochemical metallization memory，JOURNAL OF MATERIALS CHEMISTRY C，2017年
80. Transferable and flexible resistive switching memory devices based on PMMA films with embedded Fe3O4 nanoparticles，APPL PHYS LETT，2017年
81. Enhanced near-UV electroluminescence from p-GaN/i-Al2O3/n-ZnO heterojunction LEDs by optimizing the insulator thickness and introducing surface plasmons of Ag nanowires，JOURNAL OF MATERIALS CHEMISTRY C，2017年
82. Enhancement of Exciton Emission from Multilayer MoS2 at High Temperatures: Intervalley Transfer versus Interlayer Decoupling，SMALL，2017年
83. Enhanced Ultraviolet Random Lasing from Au/MgO/ZnO Heterostructure by Introducing p-Cu2O Hole-Injection Layer，ACS APPLIED MATERIALS & INTERFACES，2016年
84. Postcycling Degradation in Metal-Oxide Bipolar Resistive Switching Memory，IEEE T ELECTRON DEV，2016年
85. Reliability Improvement of Amorphous Carbon Based Resistive Switching Memory by Inserting Nanoporous Layer，IEEE ELECTR DEVICE L，2016年
86. Coexistence of unipolar and bipolar modes in Ag/ZnO/Pt resistive switching memory with oxygen-vacancy and metal-Ag filaments，CHINESE PHYSICS B，2016年
87. Forming-free electrochemical metallization resistive memory devices based on nanoporous TiOxNy thin film，J ALLOY COMPD，2016年
88. Coexistence of bipolar and unipolar resistive switching behaviors in the double-layer Ag/ZnS-Ag/CuAlO2/Pt memory device，APPL SURF SCI，2016年
89. Cycling-induced degradation of metal-oxide resistive switching memory (RRAM)，2015 IEEE International Electron Devices Meeting(IEDM)，2015年
90. Effect of reset voltage polarity on the resistive switching region of unipolar memory，PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE，2015年
91. Nonvolatile/volatile behaviors and quantized conductance observed in resistive switching memory based on amorphous carbon，CARBON，2015年
92. Improved resistive switching characteristics by introducing Ag-nanoclusters in amorphous-carbon memory，MATER LETT，2015年
93. A 2-transistor/1-resistor artificial synapse capable of communication and stochastic learning in neuromorphic systems，FRONTIERS IN NEUROSCIENCE，2015年
94. Improvement of resistive switching memory achieved by using arc-shaped bottom electrode，APPLIED PHYSICS EXPRESS，2015年
专利：
一种基于非晶碳的低电流热稳定互补型忆阻器及其制备方法 2024-02-09
图像模式识别模拟与数字混合忆阻设备及制备，实现STDP学习规则和图像模式识别方法 2023-05-23
一种包含双缓冲层的低电流长寿命忆阻器及其制备方法 2023-03-24
一种模拟型全碳基忆阻突触器件及其制备方法 2022-11-08
一种双极性无极性可逆互转型阻变存储器及其制备方法 2022-08-09
一种基于晶体管和忆阻器的模拟联想学习电路及控制方法 2022-08-02
一种基于氧化石墨烯的高稳定性阻变存储器 2020-03-10
一种双层多孔结构非晶碳材料的阻变存储器及其制备方法 2019-09-10
一种抑制银导电通道过量生长的阻变存储器及其制备方法 2019-08-23
基于 pn 异质结构的忆阻器及其制备方法 2017-02-15